journal article·1980-01

The coulomb gap and hopping conduction; applications to Fe3O4 and to amorphous silicon

N.F. Mott

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Glass properties and applications · Semiconductor materials and devices · Thin-Film Transistor Technologies

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References (11)

Show source-provided references
1. Mott · 1979
2. Knotek · Phys. Rev. · 1974 · B9 · 66410.1103/PhysRevB.9.664 ↗
3. Knotek · Phil. Mag. · 1977 · 35 · 11310.1080/14786437708232653 ↗
4. Pollak, M., this volume.
5. Mott · Phil. Mag. · 1976 · 34 · 66310.1080/14786437608223805 ↗
6. Mott · 1979
7. Efros · J. Phys. C · 1975 · 8 · 14910.1088/0022-3719/8/4/003 ↗
8. Lewis · Phys. Rev. · 1976 · B13 · 256510.1103/PhysRevB.13.2565 ↗
9. Kuipers · Phys. Rev. · 1976 · B14 · 140110.1103/PhysRevB.14.1401 ↗
10. Kuipers · J. de Physique · 1979 · C1 · 233
11. Graener, H., Rosenberg, Whall, T.E. and Jones, M.R.B., Phil. Mag. (in press).