journal article·1985-05

Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen

O.W. Holland, D. Fathy, J. Narayan, T.P. Sjoreen, S.R. Wilson

Journal of Non-Crystalline Solids· Volume 71· Issue 1-3
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Abstract

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis

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References (12)

Show source-provided references
1. Izumi · Electron. Lett. · 1978 · 14 · 59310.1049/el:19780397 ↗
2. Dexter · Appl. Phys. Lett. · 1973 · 23 · 45510.1063/1.1654956 ↗
3. Homma · Jpn J. Appl. Phys. · 1982 · 21 · 89010.1143/JJAP.21.890 ↗
4. Fathy · 1983 · 493
5. Irita · Jpn J. Appl. Phys. · 1981 · 20 · 90910.1143/JJAP.20.L909 ↗
6. Wilson · J. Elec. Mater. · 1984 · 13 · 12710.1007/BF02659840 ↗
7. Hemment · Nucl. Instr. and Meth. · 1983 · 209/210 · 15710.1016/0167-5087(83)90794-9 ↗
8. Minear · J. Appl. Phys. · 1972 · 43 · 346810.1063/1.1661740 ↗
9. Matthews · Phil. Mag. · 1973 · 27 · 131310.1080/14786437308226889 ↗
10. Pinizzotto · 1982 · 7 · 401
11. Maeyama · Jpn J. Appl. Phys. · 1982 · 21 · 74410.1143/JJAP.21.744 ↗
12. Holland · Appl. Phys. Lett. · 1984 · 44 · 75810.1063/1.94907 ↗