journal article·1983-12

Thickness dependent properties of sputtered a-Si:H from Raman and conductivity measurement

Bernard Ranchoux, Didier Jousse, Jean-Claude Bruyere, Alain Deneuville

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (10)

Show source-provided references
1. Deneuville · 1981 · 733
2. Anderson · J. Phys. Soc. Jap. · 1980 · 49 · 1197
3. Solomon · J. Phys. · 1978 · 39 · 124110.1051/jphys:0197800390110124100 ↗
4. Hasegawa · Phil. Mag. · 1982 · B46 · 23910.1080/13642818208246437 ↗
5. Hasegawa · Phil. Mag. · 1983 · B47 · 13910.1080/13642812.1983.9728426 ↗
6. Currie · J. Phys. · 1981 · 42 · L373
7. Bruyère · J. Phys. · 1980 · 41 · L27
8. Bustarret · 1982
9. E. Bustarret, A. Deneuville, H. Roux-Buisson, L. Brunel, (this proc.).
10. B. Ranchoux, D. Jousse, A. Deneuville, J.C. Bruyère, (to be published).