journal article·1996-05

Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions

S. Vignoli, R. Meaudre, M. Meaudre, P. Roca i Cabarrocas, C. Godet, P. Morin

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (12)

Show source-provided references
1. Vignoli · Phys. Rev. · 1994 · B50 · 737810.1103/PhysRevB.50.7378 ↗
2. Meaudre · Phys. Rev. · 1994 · B49 · 171610.1103/PhysRevB.49.1716 ↗
3. Meaudre · Phys. Rev. · 1992 · B45 · 1213410.1103/PhysRevB.45.12134 ↗
4. Gleskova · Appl. Phys. Lett. · 1993 · 62 · 206310.1063/1.109480 ↗
5. Meaudre · J. Appl. Phys. · 1995 · 77 · 570210.1063/1.359212 ↗
6. Vignoli · Philos. Mag. B · 1996
7. Caputo · J. Non-Cryst. Solids · 1994 · 170 · 27810.1016/0022-3093(94)90057-4 ↗
8. Morin · 1994 · 336 · 281
9. Morigaki · Jpn. J. Appl. Phys. · 1988 · 27 · 16310.1143/JJAP.27.163 ↗
10. Hikita · J. Non-Cryst. Solids · 1993 · 164–166 · 21910.1016/0022-3093(93)90530-B ↗
11. Street · Appl. Phys. Lett. · 1982 · 41 · 106010.1063/1.93400 ↗
12. C. Godet, P. Morin and P. Roca i Cabarrocas, these Proceedings, p. 449.