journal article·1987-12

Band offsets for the silicon nitride/amorphous silicon interface: Implications for charge transport and trapping in silicon nitride

W.B. Jackson, M.D. Moyer, C.C. Tsai, J. Marshall

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

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References (11)

Show source-provided references
1. Iqbal · J. Appl. Phys. · 1987 · 61 · 294710.1063/1.337842 ↗
2. Karcher · Phys. Rev. B · 1984 · 30 · 189610.1103/PhysRevB.30.1896 ↗
3. Amorphous Heterostructures and Layer Structures
4. Tuan · 1984 · 33 · 247
5. Hepburn · Phys. Rev. Lett. · 1986 · 56 · 221510.1103/PhysRevLett.56.2215 ↗
6. Schropp · Appl. Phys. Lett. · 1987 · 50 · 18510.1063/1.97656 ↗
7. Powell · Appl. Phys. Lett. · 1983 · 43 · 59710.1063/1.94399 ↗
8. Street · Phys. Rev. B · 1987 · 35 · 131610.1103/PhysRevB.35.1316 ↗
9. W. B. Jackson and M. D. Moyer (submitted for publication).
10. J. Kakalios, R. A. Street, and W. B. Jackson (submitted for publication).
11. Jackson · 1987 · 47