Influence of different carbon source gases on preparation and properties of a-Si1−C :H alloy films including μc-Si:H by hot-wire CVD

The preparation and properties of hydrogenated amorphous silicon carbon (a-Si 1-X C X :H) alloy films including hydrogenated microcrystalline silicon (μc-Si:H) by hot-wire CVD using CH 4 or C 2 H 6 have been studied. The carbon content, C/(Si +C), in the samples prepared using C 2 H 6 is larger than that prepared using CH 4 . In the preparation at a filament temperature below 1850 °C, the change with varying the carbon source gas ratio of the C/(Si+C) in the samples prepared using C 2 H 6 is large, but that prepared using CH 4 is very small. The defect density in the samples prepared using C 2 H 6 is smaller than that prepared using CH 4 with the same C/(Si + C). The influence of different carbon source gases on the preparation and properties of a-Si 1-X C X :H alloy films including μc-Si:H is discussed.