Intrinsic stress measurements as a quantitative measure of the growth morphology transition in a-Si:H
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OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Ion-surface interactions and analysis
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References (11)
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1. Phillips · Phys. Rev. Lett. · 1979 · 42 · 115110.1103/PhysRevLett.42.1151 ↗
2. Knights · Appl. Phys. Lett. · 1979 · 35 · 24410.1063/1.91086 ↗
3. Knights · Appl. Phys. Lett. · 1981 · 38 · 33110.1063/1.92359 ↗
4. D'Antonio · Phys. Rev. Lett. · 1979 · 43 · 116110.1103/PhysRevLett.43.1161 ↗
5. Postol · Phys. Rev. Lett. · 1980 · 45 · 64810.1103/PhysRevLett.45.648 ↗
6. Reimer · Phys. Rev. Lett. · 1980 · 44 · 19310.1103/PhysRevLett.44.193 ↗
7. Lang · Phys. Rev. · 1982 · B25 · 528510.1103/PhysRevB.25.5285 ↗
8. Harbison · J. Appl. Phys. · 1984 · 55 · 94610.1063/1.333148 ↗
9. Stoney · 1909 · A82 · 172
10. Cambell · 1970
11. Dirks · Thin Solid Films · 1977 · 47 · 21910.1016/0040-6090(77)90037-2 ↗