Raman-scattering studies of implantation-amorphized gallium arsenide: Comparison to sputtered and evaporated a-GaAs films
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OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces · Thin-Film Transistor Technologies
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References (12)
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1. Tiong · Appl. Phys. Lett. · 1984 · 44 · 12210.1063/1.94541 ↗
2. Holtz · Phys. Rev. · 1988 · B37 · 460910.1103/PhysRevB.37.4609 ↗
3. Semi-Insulating III–V Materials
4. Aspnes · Phys. Rev. Lett. · 1982 · 48 · 186310.1103/PhysRevLett.48.1863 ↗
5. Theeten · J. Vac. Sci. Tech. · 1982 · 20 · 47110.1116/1.571338 ↗
6. Paul · 1977 · 7 · 467
7. Gheorghiu · 1977 · 7 · 462
8. Richter · Solid State Commun. · 1981 · 39 · 62510.1016/0038-1098(81)90337-9 ↗
9. Wihl · J. Non-Cryst. Solids · 1972 · 8–10 · 17210.1016/0022-3093(72)90132-9 ↗
10. Lannin · 1974 · 20 · 260
11. Balkanski · J. Raman Spect. · 1981 · 10 · 24010.1002/jrs.1250100148 ↗
12. Holtz · Phys. Rev. · 1988 · B38 · 609710.1103/PhysRevB.38.6097 ↗