journal article·1983-12

Effect of site disorder on the optical absorption edge of a-Si:Hx

G.D Cody, B Abeles, B Brooks, P Persans, C Roxlo, A Ruppert, C Wronski

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Phase-change materials and chalcogenides

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References (10)

Show source-provided references
1. Cody · Phys. Rev. Lett. · 1981 · 47 · 148010.1103/PhysRevLett.47.1480 ↗
2. Yamasaki · J. Phys. · 1981 · 42 · 297
3. C. Roxlo, G. D. Cody, and B. Brooks, to be published.
4. Aspnes · Phys. Rev. · 1982 · B27 · 985
5. Kurik · Phys. Stat. Sol. · 1971 · 8 · 910.1002/pssa.2210080102 ↗
6. Batterman · Phys. Rev. · 1982 · 127 · 69010.1103/PhysRev.127.690 ↗
7. C. Roxlo, B. Abeles, C. Wronski, G. D. Cody and T. Tiedie, Solid State Commun. in print.
8. Guttman · Phys. Rev. · 1982 · B26 · 675610.1103/PhysRevB.26.6756 ↗
9. Abe · J. Phys. Soc. Japan · 1981 · 50 · 218510.1143/JPSJ.50.2185 ↗
10. T. Tiedje, B. Abeles and J. M. Cebulka, Solid State Commun. in print.