journal article·1991

Stability of a-Si:H deposited at high temperatures and hydrogen dilution in a remote hydrogen plasma reactor

N.M. Johnson, P.V. Santos, C.E. Nebel, W.B. Jackson, R.A. Street, K.S. Stevens, J. Walker

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (11)

Show source-provided references
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4. Johnson · Appl. Phys. Lett. · 1989 · 54 · 187210.1063/1.101264 ↗
5. Johnson · J. Appl. Phys. · 1991 · 69 · 263110.1063/1.348655 ↗
6. Cody · 1984 · 21B vol. · 11
7. Street · Phys. Rev. B · 1987 · 35 · 131610.1103/PhysRevB.35.1316 ↗
8. Street · Phys. Rev. B · 1988 · 37 · 420510.1103/PhysRevB.37.4209 ↗
9. Jackson · Phys. Rev. B · 1988 · 37 · 102010.1103/PhysRevB.37.1020 ↗
10. A. H. Mahan and M. Vanecek, Proceedings of the International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, AIP Proceedings Series, in press.
11. Ready · 1990 · 192 · 127