Effect of vacancies on electrical and optical properties of amorphous gallium arsenide films
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Abstract
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
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References (11)
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1. Mott · Advan. Phys. · 1967 · 16 · 4910.1080/00018736700101265 ↗
2. Theye · Mat. Res. Bull. · 1971 · 6 · 10310.1016/0025-5408(71)90095-X ↗
3. Brodsky · Phys. Rev. · 1970 · B1 · 263210.1103/PhysRevB.1.2632 ↗
4. Single Crystal Films
5. Stuke · 1971 · 193
6. Davey · J. Appl. Phys. · 1964 · 35 · 220310.1063/1.1702818 ↗
7. Munoz · Appl. Phys. Letters · 1970 · 16 · 26210.1063/1.1653188 ↗
8. mardix · J. Electrochem. Soc. · 1973 · 120 · 27510.1149/1.2403435 ↗
9. Paul · 1973 · Vol. 1 · 38
10. Lewis · Solid State Comm. · 1973 · 13 · 54710.1016/S0038-1098(73)80010-9 ↗
11. Spear · 1973