journal article·1993-12

Non-equilibrium carriers in a-Si:H excited by defect absorption

R Saleh, I Ulber, W Fuhs, H Mell

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies

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References (8)

Show source-provided references
1. Jackson · Journal de Physique · 1981 · C4 · 293
2. Street · Adv. in Physics · 1981 · 30 · 59310.1080/00018738100101417 ↗
3. Wilson · Phys. Rev. · 1982 · B25 · 8
4. Branz · Phys. Rev. · 1990 · B41 · 788710.1103/PhysRevB.41.7887 ↗
5. Ristein · Phys. Rev. · 1989 · B40 · 8810.1103/PhysRevB.40.88 ↗
6. Saleh · 1993 · 297
7. Gu · Phys. Rev. Lett. · 1992 · 69 · 269710.1103/PhysRevLett.69.2697 ↗
8. M. Schubert, R. Stachowitz, W. Fuhs, this volume.