journal article·1983-12

Ion bombardment effect on the growth of a-Si:H films deposited from a pure silane plasma

B. Drevillon, J. Huc, N. Boussarssar

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (8)

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1. Reimer · Phys. Rev. B · 1981 · 24 · 336010.1103/PhysRevB.24.3360 ↗
2. Chen · Solar Energy Mat. · 1982 · 8 · 20510.1016/0165-1633(82)90063-6 ↗
3. Matsuda · Thin Solid films · 1982 · 92 · 17110.1016/0040-6090(82)90200-0 ↗
4. Hotta · J. de Phys. · 1981 · 42 · C4
5. Drevillon · Appl. Phys. Lett. · 1983 · 42 · 80110.1063/1.94100 ↗
6. Drevillon · Appl. Phys. Lett. · 1980 · 37 · 64610.1063/1.92008 ↗
7. Drevillon · Rev. Sci. Instrum. · 1982 · 53 · 96910.1063/1.1137118 ↗
8. J. Perrin, B. Drevillon, J. de Phys. (to be published).