journal article·1987-12

Characterization of highly photoconductive amorphous silicon germanium alloys prepared by DC glow discharge

H.C. Weller, F. Kessler, E. Lotter, C.E. Nebel, S.M. Paasche, G.H. Bauer

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. Tanaka · 1986 · 70 · 245
2. Ichimura · Jap. J. Appl. Phys. · 1986 · 25 · L27610.1143/JJAP.25.L276 ↗
3. Konagai · Tech.. Dig. Int. PVSEC-2 · 1986 · 417
4. Weller · 1987
5. Spear · J. Noncryst. Sol. · 1984 · 66 · 16310.1016/0022-3093(84)90316-8 ↗
6. Ritter · J. Appl. Phys. · 1987
7. C.E. Nebel et al., to be published.
8. den Boer · J. Physique C4 no. 10 · 1981 · C4
9. H.C. Weller et al., to be published.