journal article·1987-12

Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)

D.V. Tsu, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (6)

Show source-provided references
1. Lucovsky · J Vac Sci Technol A · 1986 · 4 · 68110.1116/1.573832 ↗
2. G Lucovsky and DV Tsu, these proceedings.
3. Lucovsky · Phys Rev B · 1979 · 19 · 206410.1103/PhysRevB.19.2064 ↗
4. GN Parsons, DV Tsu and G Lucovsky, these proceedings.
5. Lucovsky · Solid State Commun · 1979 · 29 · 57110.1016/0038-1098(79)90666-5 ↗
6. Fritzsche · Solar Energy Mat · 1980 · 3 · 44710.1016/0165-1633(80)90001-5 ↗