A new technique to characterize endurance of EEPROM tunnel oxides
Source abstract
Abstract
In this study, the critical parameters relevant to endurance of EEPROM memory cells are theoretically determined from cells geometrical design and programming pulses temporal shape. A new experimental technique is then proposed to realize realistic current pulsed stresses on dedicated large area cell test structures. The influence of the different relevant pulses parameters is finally experimentally studied and discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Electronic and Structural Properties of Oxides
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References (10)
Show source-provided references
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