Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurements
Source abstract
Abstract
The effusion of argon, neon and helium as well as of hydrogen was used for microstructure characterization of dc sputtered amorphous silicon carbon (a-SiC:H) alloys deposited with various carbon and hydrogen contents. Inert gas atoms were incorporated into the material by ion implantation. Our results suggest that effusion of implanted inert gas atoms is a useful method for microstructure characterisation of a-Si:C:H films.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
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References (14)
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