journal article·1996-05

Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: a consequence of structural relaxation?

Mireille Cuniot, Jean Dixmier, Pere Roca i Cabarrocas

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor Quantum Structures and Devices

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References (3)

Show source-provided references
1. Roca i Cabarrocas · J. Phys. (Paris) I · 1992 · 2 · 1979
2. Dixmier · J. Phys. (Paris) I · 1992 · 2 · 1011
3. Cuniot · Appl. Phys. Lett. · 1992 · 60 · 133310.1063/1.107334 ↗