Photoluminescence of defects in Ge+ ion implanted thermal SiO2 films
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OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Ion-surface interactions and analysis
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References (19)
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19. By computer simulation, V.B. Sulimov et al. (J. Non-Cryst. Solids 191 (1995) 260) concluded that the excited states of the Si-related neutral oxygen vacancy SiNOV (≡Si⋯Si≡), especially the triplet state are sensitive to the Si–Si distance (RSi–Si). The radiative energy of the triplet-to-singlet transition is a non-monotonical function of the RSi–Si value. Since the structure of the GeNOV is similar to that of the SiNOV, we consider that the GeNOV has similar PL properties, i.e. its radiative energies are sensitive to the Ge–Ge distance10.1016/0022-3093(95)00293-6 ↗