Simulation of transient transport in amorphous multilayers

Abstract We simulate the charge carrier transient transport in amorphous layers of multilayer structures. We studied the effect of the time delay of carriers at interfaces on the transient photocurrent shape. The characteristics of transient photocurrents on amorphous multilayers, as obtained by the time-of-flight (TOF) technique, were simulated by random walks through cubic lattices. We compared our results with experimental data measured on Se/Se 1− x Te x multilayers. We suggest the existence of two conduction mechanisms involved in the carrier transport through the multilayers. One mechanism is hopping through localized states of the amorphous layers and the other could be thermal activation at interfaces or direct tunnelling through barriers.