journal article·1996-05

Electric field concentration at electrode edge with decreasing amorphous silicon defect density

Hisanori Ihara, Eiji Oba, Yoshinori Iida, Hidetoshi Nozaki, Tetsunori Wada, Akihiko Furukawa, Sohei Manabe, Hiroyuki Tango, Okio Yoshida

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (7)

Show source-provided references
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4. Ganguly · 1992 · 258 · 39
5. McMacken · IEEE Trans. Electron Devices · 1992 · 11 · 629
6. Nishida · J. Non-Cryst. Solids · 1993 · 164–166 · 75510.1016/0022-3093(93)91107-E ↗
7. Simmons · Phys. Rev. · 1971 · B4 · 50210.1103/PhysRevB.4.502 ↗