Simulation of phase-change processes in non-volatile memory cells

Abstract The simulation procedure for phase change processes in non-volatile memory cells is suggested. The computation is based on a cellular functional space and uses the Monte-Carlo method. Common rules of cell infilling by phases are used. The simulation experiments show the dynamics of the phase distribution changes in an active zone of a memory device during set–reset processes. The developed model makes it possible to investigate the influence of construction and set–reset impulses on the functional parameters of a memory element.