Defect metastability associated with oxygen and nitrogen impurity atoms in hydrogenated amorphous silicon films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. Williams · J. Vac. Sci. Technol. · 1994 · A12 · 107210.1116/1.579287 ↗
2. Tanaka · J. Non-Cryst. Solids · 1991 · 137&138 · 110.1016/S0022-3093(05)80044-4 ↗
3. Yiping · Phys. Rev. Lett. · 1995 · 74 · 55810.1103/PhysRevLett.74.558 ↗
4. Lucovsky · Appl. Surf. Sci. · 1995
5. Lucovsky · Philos. Mag. · 1979 · B39 · 51310.1080/13642817908246002 ↗
6. Lucovsky · J. Non-Cryst. Solids · 1980 · 35&36 · 82510.1016/0022-3093(80)90302-6 ↗
7. Lucovsky · 1980 · 301
8. Stahlbush · Microelectron. Eng. · 1995 · 28 · 1510.1016/0167-9317(95)00006-T ↗
9. Cotton · 1972
10. DiMaria · Microelectron. Eng. · 1995 · 28 · 6310.1016/0167-9317(95)00016-2 ↗
11. Cartier · Microelectron. Eng. · 1995 · 28 · 310.1016/0167-9317(95)00004-R ↗
12. Jing · J. Vac. Sci. Technol. · 1995 · B13 · 161310.1116/1.587866 ↗
13. Hattangady · 1995
14. Lucovsky · J. Non-Cryst. Solids · 1994 · 179 · 35410.1016/0022-3093(94)90716-1 ↗