High-pressure water vapor treatment for poly-crystalline germanium thin films

Abstract We have investigated the high-pressure water (H 2 O) vapor treatment for poly-crystalline Ge (poly-Ge) thin films, which were prepared by solid phase crystallization. The optical-absorption coefficients of poly-Ge were reduced by the treatment, suggesting that the grain-boundary defects were successfully passivated. But the poly-Ge films were sometimes damaged by the treatment in higher pressure and temperature. Compromised conditions should be pursued between the effective passivation and avoiding the damage. The rapid cooling after the treatment promotes defect passivation but causes structural distortion. The results show that the high-pressure H 2 O vapor treatment is an effective method for the defect passivation of poly-Ge films.