journal article·1999-09

Motion of hydrogen ions in the proton memory

V Girault, R.A.B Devine

Journal of Non-Crystalline Solids· Volume 254· Issue 1-3
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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Advancements in Semiconductor Devices and Circuit Design

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References (14)

Show source-provided references
1. Vanheusden · Appl. Phys. Lett. · 1994 · 64 · 157510.1063/1.111530 ↗
2. Warren · Appl. Phys. Lett. · 1996 · 68 · 299310.1063/1.116674 ↗
3. Warren · IEEE Trans. Nucl. Sci. · 1996 · 43 · 178910.1109/23.556844 ↗
4. Vanheusden · Nature · 1997 · 386 · 58710.1038/386587a0 ↗
5. Vanheusden · Microelectronic Eng. · 1997 · 36 · 24110.1016/S0167-9317(97)00056-7 ↗
6. Vanheusden · Mater. Res. Soc. Symp. Proc. · 1997 · 446 · 18710.1557/PROC-446-187 ↗
7. Vanheusden · J. Non-Cryst. Solids · 1997 · 216 · 11610.1016/S0022-3093(97)00178-6 ↗
8. Vanheusden · Appl. Phys. Lett. · 1998 · 72 · 2810.1063/1.121447 ↗
9. Vanheusden · Appl. Phys. Lett. · 1998 · 73 · 67410.1063/1.121944 ↗
10. Cristoloveanu · 1995 · 104
11. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York 1981, pp. 392, 440, 449
12. Ferreira · Mater. Res. Soc. Symp. Proc. · 1997 · 446 · 24710.1557/PROC-446-247 ↗
13. Hofstein · IEEE Trans. Elec. Dev. · 1966 · ED-13 · 22210.1109/T-ED.1966.15674 ↗
14. Snow · J. Appl. Phys. · 1965 · 36 · 166410.1063/1.1703105 ↗