DC and ac measurements on metal/a-Si:H/metal room temperature quantised resistance devices

Abstract Direct-current (dc) and alternating-current (ac) conductivities of room temperature electroformed Cr/p + -a-Si:H/V thin film quantised resistance devices have been measured as a function of temperature, applied field and frequency. The quantised resistance does not change over a temperature range. This invariance is in accordance with the theoretical model suggested for high temperature quantised resistance phenomena. The onset of quantised resistance jumps is associated with the formation of an inductive component within the structure indicating a temporary formation of a metallic conduction channel under the effect of an applied electric field.