journal article·1987-02

Valence-electron properties of a-Si1 − xCx:H studied by UPS and EELS

Xu Xixiang, Zhang Fangqing, Chen Guanghua

Journal of Non-Crystalline Solids· Volume 90· Issue 1-3
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (10)

Show source-provided references
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4. Zhang · SPIE · 1985 · Vol. 524 · 112
5. Oelhafen · Thin Solid Films · 1984 · 120 · 23110.1016/0040-6090(84)90299-2 ↗
6. Evangelisti · J. Non-Cryst. Sol. · 1985 · 77&78 · 96910.1016/0022-3093(85)90823-3 ↗
7. Karcher · Phys. Rev. B · 1984 · 4 · 189610.1103/PhysRevB.30.1896 ↗
8. Street · Phys. Rev. Lett. · 1982 · 49 · 118710.1103/PhysRevLett.49.1187 ↗
9. Guanghua · Solar Energy Materials · 1984 · 11 · 28110.1016/0165-1633(84)90046-7 ↗
10. Chen Guanghua, Xu Xixiang, Zhang Fangqing, Jiang Zhichen, will be published in phys. stat. sol. (b), (1986)