journal article·1996-05

New results using capacitance transient studies to investigate deep defect relaxation in hydrogenated amorphous silicon

Daewon Kwon, Adam Gardner, J.David Cohen

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (6)

Show source-provided references
1. Cohen · Phys. Rev. Lett. · 1992 · 69 · 335810.1103/PhysRevLett.69.3358 ↗
2. Carlen · Phys. Rev. · 1995 · B51 · 217310.1103/PhysRevB.51.2173 ↗
3. Jackson · Phys. Rev. · 1995 · B52 · 223310.1103/PhysRevB.52.R2233 ↗
4. Gardner · 1994 · 336 · 207
5. Cohen · Phys. Rev. · 1982 · B25 · 532110.1103/PhysRevB.25.5321 ↗
6. Cohen · Phys. Rev. Lett. · 1994 · 73 · 36610.1103/PhysRevLett.73.366 ↗