journal article·1989-12

Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

B.N Davidson, G Lucovsky, G.N Parsons, R.J Nemanich, A Esser, K Seibert, H Kurz

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Abstract

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Glass properties and applications · Silicon Nanostructures and Photoluminescence

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References (6)

Show source-provided references
1. A. Esser, K. Seibert, H. Kurz, G.N. Parsons, C. Wang, B.N. Davidson, G. Lucovsky, and R.J. Nemanich, this volume.
2. Fauchet · Phys. Rev. Lett. · 1986 · 53 · 243810.1103/PhysRevLett.57.2438 ↗
3. Ley · 1984 · 61
4. Pierce · Phys. Rev. · 1972 · B5 · 301710.1103/PhysRevB.5.3017 ↗
5. Klazes · Phil. Mag. · 1982 · B25 · 37710.1080/01418638208227445 ↗
6. Brodsky · Phys. Rev. · 1970 · B1 · 263210.1103/PhysRevB.1.2632 ↗