journal article·1995-07

Parameters controlling the generation of natural intrinsic EX defects in thermal SiO2 on Si

A. Stesmans, F. Scheerlinck

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Anodic Oxide Films and Nanostructures

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References (9)

Show source-provided references
1. Poindexter · J. Appl. Phys. · 1981 · 52 · 87910.1063/1.328771 ↗
2. Griscom · Rev. Solid State Sci. · 1990 · 4 · 565
3. Stesmans · Phys. Rev. · 1992 · B45 · 950110.1103/PhysRevB.45.9501 ↗
4. Stesmans · Phys. Rev. · 1993 · B48 · 241810.1103/PhysRevB.48.2418 ↗
5. Vanheusden · J. Appl. Phys. · 1991 · 69 · 665610.1063/1.348882 ↗
6. Stesmans · Phys. Rev. · 1994 · B50 · 520410.1103/PhysRevB.50.5204 ↗
7. Brower · Phys. Rev. · 1990 · B42 · 344410.1103/PhysRevB.42.3444 ↗
8. Brower · Appl. Phys. Lett. · 1990 · 57 · 16210.1063/1.103971 ↗
9. Revesz · 1987 · 297