Preparation and properties of titanium silicide coating glass by CVD

Abstract Titanium silicide thin films were prepared on glass substrates by chemical vapor deposition using SiH 4 and TiCl 4 as the precursors. The phase structure of the thin films was identified by XRD. The surface morphology of the thin films was observed by FESEM. The sheet resistance and optical behaviors of the thin films were measured by the four point resistivity test system and FTIR spectrometer, respectively. Titanium disilicide (TiSi 2 ) thin films with the face-centered orthorhombic structure are formed. The suitable formation temperature of the TiSi 2 crystalline phase is about 710 °C. The formation of TiSi 2 crystalline phase is dependent on the thickness of thin films and a quantity of the crystalline phase of TiSi 2 in the thin film is directly related to mole ratio of SiH 4 /TiCl 4 . The sheet resistance of the TiSi 2 thin films is dependent on the formation of the TiSi 2 crystalline phase. With the mole ratio of SiH 4 /TiCl 4 of 3, the lowest sheet resistance (0.7 Ω/□) of titanium silicide thin film is formed at 710 °C. The maximum reflectance of the TiSi 2 thin films is about 0.95 on the broad IR heat radiation. A related reaction mechanism was proposed.