journal article·1996-05

Structural memory model of slow defect relaxation in hydrogenated amorphous silicon

Howard M. Branz, Thomas Unold, Peter A. Fedders

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon and Solar Cell Technologies

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References (12)

Show source-provided references
1. Cohen · Phys. Rev. Lett. · 1992 · 69 · 335810.1103/PhysRevLett.69.3358 ↗
2. Carlen · Phys. Rev. · 1995 · B51 · 217310.1103/PhysRevB.51.2173 ↗
3. Jackson · 1995 · 233
4. Branz · 1994 · 129
5. Fedders · J. Non-Cryst. Solids · 1995 · 190 · 14210.1016/0022-3093(95)00267-7 ↗
6. Unold · 1995 · 293
7. Toyozawa · Physica · 1983 · 116B · 7
8. Branz · Phys. Rev. · 1993 · B48 · 866710.1103/PhysRevB.48.8667 ↗
9. Moss · 1970 · 658
10. Branz · Phys. Rev. · 1989 · B39 · 510710.1103/PhysRevB.39.5107 ↗
11. E.A. Schiff, private communication.
12. Rivier · Philos. Mag. · 1979 · A40 · 859