Surface pattern recording in Sb2Se3 thin films
Source abstract
Abstract
Abstract Results on the modification of Sb 2 Se 3 thin film surface topology by irradiation followed by wet-etching are given. Comparison of study results revealed the possible role of purely electronic and thermal processes in the relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress. Changes in surface characteristics are presented and potential applications of this treatment are discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
Show source-provided references
1. Shallow Fresnel lens fabrication using grayscale lithography made by high energy beam sensitive mask (HEBS) technology and reactive ion etching10.1117/12.809376 ↗
2. Development of a deep silicon phase Fresnel lens using gray-scale lithography and deep reactive ion etching10.1109/JMEMS.2003.823220 ↗
3. Tanaka · 1999 · 125
4. Chalcogenide glass e-beam and photoresists for ultrathin grayscale patterning10.1117/1.3273966 ↗
5. Fabrication of nano-gratings in arsenic sulphide films10.1016/j.jnoncrysol.2006.10.076 ↗
6. Surface patterning on amorphous chalcogenide nanomultilayers10.1016/j.optmat.2009.08.018 ↗
7. Formation of surface structures on amorphous chalcogenide films10.1016/j.jnoncrysol.2006.09.064 ↗
8. Relief and trench formation on chalcogenide thin films using electron beams10.1116/1.3002564 ↗
9. Electron beam induced surface modification of amorphous Sb2Se3 thin film10.1016/j.jnoncrysol.2012.02.013 ↗
10. CASINO: a new Monte Carlo code in C language for electron beam interactions—part II: tabulated values of the Mott cross section10.1002/sca.4950190103 ↗
11. Selective wet-etching of amorphous/crystallized Sb20Se80 thin films
12. Surface modification of Sb–Se thin films by laser irradiation and etching
13. Direct writing of optical gratings using a scanning electron microscope10.1364/AO.17.002342 ↗
14. Nanostructuring of chalcogenide glasses using electron beam lithography
15. Electron beam induced reliefs in chalcogenide glasses10.1063/1.118356 ↗
16. Goldstein · 2003 · 586