journal article·1995-07

Comparison of X-ray-induced electron and hole trapping in various materials (YSZ, SIMOX, thermal SiO2)

P. Paillet, P. Gonon, C. Schwebel, J.-L. Leray

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Nuclear materials and radiation effects · Ga2O3 and related materials

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References (9)

Show source-provided references
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5. Flament · IEEE Trans. Nucl. Sci. NS-39 · 1992 · 213210.1109/23.211413 ↗
6. Hervé · J. Appl. Phys. · 1992 · 72 · 363410.1063/1.352306 ↗
7. Paillet · 1993 · 140
8. Fleetwood · IEEE Trans. Nucl. Sci. NS-39 · 1992 · 219210.1109/23.211421 ↗
9. Hervé · 1993 · 154