journal article·1998-05

Relaxation of thermally induced defects in LPCVD amorphous silicon

P Agarwal, M Kostana, S.C Agarwal, S.M Pietruszko

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (5)

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1. Street · Phys. Rev. B · 1987 · 35 · 131610.1103/PhysRevB.35.1316 ↗
2. Agarwal · J. Non-Cryst. Solids · 1996 · 201 · 16310.1016/0022-3093(96)00197-4 ↗
3. Staebler · Appl. Phys. Lett. · 1977 · 31 · 29210.1063/1.89674 ↗
4. Branz · Phys. Rev. B · 1993 · 48 · 1711410.1103/PhysRevB.48.17114 ↗
5. Pietruszko · J. Non-Cryst. Solids · 1996 · 198–200 · 7310.1016/0022-3093(95)00661-3 ↗