The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states

Abstract Modulated photocurrent measurements of a-As2Se3 in annealed and light exposed states are analyzed to determine the trapping and recombination centers of holes. Under weak bias illumination a single kind of neutral trapping centers was observed. Their capture radius was found to reversibly increase after strong light exposure. Under moderate bias illumination additional gap states were observed which act as recombination centers and dominate recombination of holes.