Electrical properties of As Se1 (x≤ 0.05) Mott-barriers

Abstract We have experimentally measured the current–voltage and capacitance–voltage characteristics of Au/amorphous AsxSe1 − x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous AsxSe1 − x (a-AsxSe1 − x) thickness of ~ 0.4 to ~ 2.8 μm does not significantly change over the entire range of applied bias (− 5 V to 5 V), indicating that the a-AsxSe1 − x films are fully depleted and thus the structures are Mott barriers. The current–voltage (I–V) characteristics of the a-As0.03Se0.97 device at low ( 104 V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole–Frenkel mechanism. A permanent transition to a high conductance state (~ 10− 3 S) is observed after exposure to very high electric fields (~ 4 × 105V/cm).