Device-grade a-SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing method
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Dalal · IEEE. Trans. Electron. Dev., ED-27 · 1980 · 66210.1109/T-ED.1980.19920 ↗
2. Mackenzie · Phys. Rev. · 1985 · B31 · 219810.1103/PhysRevB.31.2198 ↗
3. Matsuda · Appl. Phys. Lett. · 1985 · 47 · 106110.1063/1.96379 ↗
4. Matsuda · Jpn. J. Appl. Phys. · 1986 · 25 · 5410.1143/JJAP.25.L54 ↗
5. Xu · Jpn. J. Appl. Phys. · 1995 · 34 · L20310.1143/JJAP.34.L203 ↗
6. Y. Miyoshi, Y. Yoshida, S. Miyazaki and M. Hirose, these Proceedings, p. 1029.
7. Shirai · Jpn. J. Appl. Phys. · 1994 · 33 · 559010.1143/JJAP.33.5590 ↗
8. Nakamura · Jpn. J. Appl. Phys. · 1995 · 34 · 44210.1143/JJAP.34.442 ↗
9. Nakashita · Jpn. J. Appl. Phys. · 1992 · 31 · 173010.1143/JJAP.31.1730 ↗
10. Street · 1984 · Vol. 21 · 197
11. Asano · Appl. Phys. Lett. · 1990 · 56 · 53310.1063/1.102736 ↗