Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature
Source abstract
Abstract
Abstract Hydrogenated amorphous silicon oxide (a-SiO:H) is an attractive passivation material to replace hydrogenated amorphous silicon (a-Si:H) in heterojunction solar cells due to its properties of high-transparency and a wide band gap. In this study, we investigated the structural properties, optical properties, and passivation quality of a-SiO:H films by varying the ratio of [CO2]/[SiH4]. Both the optical band gap and the absorption coefficient of a-SiO:H films could be conveniently modulated by varying the CO2 partial pressure. High quality passivation with a low surface recombination velocity of approximately 17.4 cm/s can be obtained when the ratio of [CO2]/[SiH4] = 0.32, due to the suppression of partial epitaxial growth at the interface, resulting in an abrupt interface, which was verified by transmission electron microscopy. Furthermore, the optical absorption coefficient of a-SiO:H ([CO2]/[SiH4] = 0.32) decreased by 25% compared with that of the a-Si:H (without CO2) at a wavelength of 300 nm. As a result, the high passivation quality was attributed to the properties of the abrupt interface and the sufficient hydrogen content between the a-SiO:H/c-Si interface.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si–SiO2 interface10.1063/1.350782 ↗
2. Ultrathin device quality oxide–nitride–oxide heterostructure formed by remote plasma enhanced chemical vapor deposition10.1063/1.111681 ↗
3. Advances in low-temperature passivated silicon solar cells
4. Obtaining a higher VOC in HIT cells10.1002/pip.646 ↗
5. Sanyo's challenges to the development of high-efficiency HIT solar cells and the expansion of HIT business
6. Influence of hydrogen-bonding configurations on the physical properties of hydrogenated amorphous silicon10.1103/PhysRevB.50.18046 ↗
7. A buffer-layer/a-SiOx:H(p) window-layer optimization for thin film amorphous silicon based solar cells10.1016/j.tsf.2013.06.064 ↗
8. Structure of high-photosensitivity silicon–oxygen alloy films10.1016/0022-3093(93)91187-8 ↗
9. Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells10.1063/1.2790815 ↗
10. Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire CVD10.1016/S0040-6090(01)01208-1 ↗
11. Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna10.1016/S0040-6090(00)01663-1 ↗
12. Crystalline silicon interface passivation improvement with a-Si1−xCx:H and its application in hetero-junction solar cells with intrinsic layer10.1063/1.4770308 ↗
13. Description and characterization of a ECR plasma device developed for thin film deposition10.1590/S0103-97332003000100011 ↗
14. Low-temperature deposition of hydrogenated amorphous silicon in an electron cyclotron resonance reactor for flexible displays
15. Highly stable micromorph tandem solar cells fabricated by ECRCVD with separate silane gas inlets system10.1109/JQE.2014.2324816 ↗
16. Parameterization of the optical functions of amorphous materials in the interband region10.1063/1.118064 ↗
17. Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells10.1063/1.3091283 ↗
18. Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry10.1063/1.1903110 ↗
19. Optical properties of thin films10.1016/0040-6090(82)90590-9 ↗
20. Optical absorption above the optical gap of amorphous silicon hydride10.1016/0165-1633(82)90065-X ↗
21. Infrared and Raman spectra of the silicon–hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering10.1103/PhysRevB.16.3556 ↗
22. Infrared spectrum and structure of hydrogenated amorphous silicon10.1002/pssb.2221000103 ↗
23. Oxygen-bonding environments in glow-discharge-deposited amorphous silicon–hydrogen alloy films10.1103/PhysRevB.28.3225 ↗
24. Optical, electrical and structural properties of SiO:H films prepared from He dilution to the SiH4 plasma10.1088/0022-3727/42/21/215404 ↗
25. States in the gap10.1016/0022-3093(72)90194-9 ↗
26. Comprehensive study of different PECVD-deposition methods for deposition of thin intrinsic amorphous silicon for heterojunction solar cells
27. Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells10.1016/j.tsf.2005.07.196 ↗
28. Impact of epitaxial growth at the heterointerface of a-Si:H/c-Si solar cells10.1063/1.2426900 ↗
29. Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates10.1016/j.tsf.2005.12.166 ↗
30. Real-time study of a-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation10.1103/PhysRevB.77.205329 ↗