Fundamental transport mechanisms and high field mobility measurements in amorphous silicon
Source abstract
Abstract
Models for high field effects observed in electron drift mobility measurements on hydrogenated amorphous silicon (a-Si:H) are discussed. In particular we describe the two high-field generalizations of the bandtail multiple-trapping model (effective temperatures, and an electric field dependent emission prefactor), and we discuss the origin of these phenomenological models in hopping and mobility-edge models for transport.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (16)
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1. Tiedje · 1984 · 261
2. Orenstein · Philos. Mag. · 1982 · B46 · 2310.1080/13642818208246421 ↗
3. Silver · Phys. Rev. Lett. · 1982 · 48 · 35210.1103/PhysRevLett.48.352 ↗
4. Monroe · 1991 · 49
5. Overhof · 1992 · Vol. 258 · 681
6. Marianer · Phys. Rev. · 1992 · B46 · 1310010.1103/PhysRevB.46.13100 ↗
7. Devlen · Philos. Mag. · 1993 · B68 · 34110.1080/13642819308215291 ↗
8. Gu · Phys. Rev. B · 1995
9. Devlen · J. Non-Cryst. Solids · 1989 · 114 · 56710.1016/0022-3093(89)90652-2 ↗
10. Juska · Solid State Commun. · 1990 · 75 · 53110.1016/0038-1098(90)90492-T ↗
11. Nebel · Phys. Rev. · 1992 · B46 · 678910.1103/PhysRevB.46.6789 ↗
12. Esipov · Phys. Rev. · 1991 · B44 · 793010.1103/PhysRevB.44.7930 ↗
13. Grünewald · Phys. Status Solidi (b) · 1979 · 94 · 12510.1002/pssb.2220940113 ↗
14. Electronic Processes in Non-Crystalline Materials
15. Street · Philos. Mag. · 1991 · B63 · 134310.1080/13642819108205566 ↗
16. Chevrier · J. Appl. Phys. · 1994 · 76 · 741510.1063/1.357967 ↗