New insight into phase change memories

Abstract The switching mechanism in phase change memories was described on the basis of minimum switching unit: the commuton . A commuton is a minimum cluster of atoms that supports a reversible phase change from high to low electrical conduction state and back under the influence of an external signal. The switching process in a phase change chalcogenide film was modeled using two dimensional cellular automata approach. A system of 50 × 50 cells, each cell containing a commuton, was simulated. In the particular case of Ge 2 Sb 2 Te 5 (investigated here) this system corresponds to a 30 × 30 nm area. The formation of the percolation path as a function of phase change induced in commutons explains the switching phenomenon. The influence of the percent of defects in the material on the percolation threshold has been studied.