Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature

Abstract We performed an investigation of the variations of the IR absorption peaks as a function of the annealing temperature, Ta, in a-SiC:H alloys. The samples were grown by plasma enhanced chemical vapor deposition using a gas mixture of SiH4+C2H2. We followed the evolution of several peaks during the thermal cycle (i.e. heating from 25 to 250 °C followed by cooling under identical conditions). The analysis of some characteristic parameters of the IR peaks evidences the reversible behavior of the IR absorption as a function of Ta cycles. The link with similar reversible resistivity effects is studied.