Amorphous silicon memory arrays

This paper presents fabrication procedures, memory architectures, and structures that can enable competitive, noncrystalline, low-cost, high-capacity, nonvolatile memory in archival mobile applications such as portable music, photo, and video players. Results in this paper show that imprint lithography is capable of submicron scale features with submicron layer-to-layer alignment on flexible roll-to-roll substrates. Noncrystalline two-terminal diode-addressed cross point arrays have been fabricated and tested in illustrating the concepts. The electrical characteristics of various possible noncrystalline switch elements are presented in the context of inexpensive archival memory.