journal article·1985-12

Boron diffusion in amorphous silicon analized by SIMS and temperature dependent conductivity

G Bilger, C.E Nebel, G.H Bauer, H.-D Mohring

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies

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References (8)

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1. Carlson · Appl. Phys. Lett. · 1978 · 33 · 8110.1063/1.90153 ↗
2. Ziegler · J. Appl. Phys. · 1972 · 43 · 380910.1063/1.1661816 ↗
3. Elliman · Appl. Phys. Lett. · 1985 · 46 · 47810.1063/1.95563 ↗
4. Zemek · Sol. En. Mat. · 1984 · 11 · 31110.1016/0165-1633(84)90049-2 ↗
5. Bilger · Thin Solid Films · 1984 · 119 · 10310.1016/0040-6090(84)90162-7 ↗
6. Sputtering of Multicomponent Mat.
7. General features of diffusion in semiconductors
8. Sputtering by ion bombardment