Argon-plasma-induced growth of crystalline grains in microcrystalline silicon: Formation mechanism of grains

A thick (∼300 nm) microcrystalline silicon (μc-Si:H) film with a low crystalline volume fraction (∼24%) and a columnar grain size of about 100 nm was exposed to an argon plasma at a substrate temperature of 220 °C after deposition. It is shown that argon plasma treatment significantly enhances film-crystallinity throughout the μc-Si:H layer: over a factor of 2 in crystalline fraction and by a factor of 3 in columnar grain size after a 90-min argon treatment. Based on these experimental results, it is proposed that crystallization of μc-Si:H is likely mediated by the energy transferred from energetic argon atoms.