Influence of powder formation in a silane discharge on a-Si:H film growth monitored by in situ ellipsometry
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Ion-surface interactions and analysis
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References (13)
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1. W. B. Jackson, D. K. Biegelsen, R. J. Nemanich and J. C. Knights, 42 (1983) 10510.1063/1.93762 ↗
2. Favre · J. Non-Cryst. Solids · 1987 · 97 & 98 · 73110.1016/0022-3093(87)90172-4 ↗
3. Sopka · IEEE Trans. Electron. Devices · 1989 · 36 · 284810.1109/16.40945 ↗
4. Nakayama · J. Non-Cryst. Solids · 1985 · 77 & 78 · 75710.1016/0022-3093(85)90770-7 ↗
5. Hamamoto · Thin Solid Films · 1989 · 177 · 16110.1016/0040-6090(89)90564-6 ↗
6. Kocka · J. Non-Cryst. Solids · 1983 · 59 & 60 · 76310.1016/0022-3093(83)90283-1 ↗
7. Schmidt · Verh. Dtsch. Phys. Ges. (VI) · 1992 · 27 · 500
8. Hundhausen · J. Non-Cryst. Solids · 1991 · 137 & 138 · 79510.1016/S0022-3093(05)80240-6 ↗
9. Howling · Appl. Phys. Lett. · 1991 · 59 · 140910.1063/1.105322 ↗
10. Kausche · 1993 · 195
11. Schmidt · 1993
12. Aspnes · Thin Solid Films · 1982 · 89 · 24910.1016/0040-6090(82)90590-9 ↗
13. Collins · 1989 · Vol. B · 1003