journal article·1996-05

Effect of ion bombardment during plasma CVD on the film properties of a-Si:H studied by IEC plasma CVD

T. Sasaki, Y. Ichikawa

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies

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References (16)

Show source-provided references
1. Kato · Japan. J. Appl. Phys. · 1991 · 30 · 124510.1143/JJAP.30.1245 ↗
2. Ichimura · 1985 · 1495
3. Johnson · Phys. Rev. · 1950 · 80 · 5810.1103/PhysRev.80.58 ↗
4. Sasaki · 1995 · 63
5. Chen · J. Appl. Phys. · 1965 · 36 · 236310.1063/1.1714492 ↗
6. Kieffer · Rev. Mod. Phys. · 1966 · 38 · 110.1103/RevModPhys.38.1 ↗
7. Ohmori · J. Phys. D · 1986 · 19 · 102910.1088/0022-3727/19/6/017 ↗
8. 1955 · 13
9. Ganguly · Phys. Rev. B · 1993 · 47 · 366110.1103/PhysRevB.47.3661 ↗
10. Adler · 1984 · Vol. 21 · 295
11. Brodsky · Appl. Phys. Lett. · 1977 · 30 · 56110.1063/1.89260 ↗
12. Physics of Semiconductor Devices
13. Matsuda · Surf. Sci. · 1990 · 227 · 5010.1016/0039-6028(90)90390-T ↗
14. Matsuda · Appl. Phys. Lett. · 1985 · 47 · 106110.1063/1.96379 ↗
15. Zhong · 1995
16. Sasaki · Plasma Source Sci. Technol. · 1993 · 2 · 3010.1088/0963-0252/2/1/008 ↗