Density of states and σ–π mixing in hydrogenated amorphous carbon films
Source abstract
Abstract
Abstract In this work we analyse the real and imaginary parts of the complex dielectric functions of two a-C:H samples, which are available over a wide energy range (2–25 eV). Values of the sp3/sp2 ratios matching those determined by XANES can be obtained by an optical analysis of these data, provided that an asymmetric Gaussian density of states model (for π-like states) and suitable matrix element values (for σ-like states) are used. These results also suggest that bonding and anti-bonding states sitting ∼2 eV above and below Fermi level are not pure π-states, but that some π–σ mixing is occurring. The origin and the effects of such a mixing are discussed.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · High-pressure geophysics and materials · High voltage insulation and dielectric phenomena
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References (16)
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