Microstructure characterization of plasma-grown a-Si:H and related materials by effusion of implanted helium
Source abstract
Abstract
Abstract The microstructure characterization of plasma-grown a-Si:H, a-Ge:H and related alloys by effusion of implanted helium is studied. Helium effusion transients give information on the microscopic material density and on the presence of isolated voids. The results show a more open microstructure for a-Ge:H than for a-Si:H for samples prepared at substrate temperatures TS
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (8)
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