Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopy
Source abstract
Abstract
Abstract Light-induced effects on the intensity and lifetime distribution of low energy photoluminescence (PL) in a-Si:H films and their temperature variation have been studied. The origin of the low energy PL is discussed in terms of a model of T 3 + –N 2 − pairs. The change in the temperature variation of the PL intensity caused by the illumination is discussed by considering an additional thermal excitation process followed by non-radiative recombination.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (11)
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